sot-23 plastic-encapsulate mosfets p-channel 30-v(d-s) mosfet feature trenchfet power mosfet applications z load switch for portable devices z dc/dc converter marking: s3 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -30 gate-source voltage v gs 20 v continuous drain current i d -1.9 continuous source-drain diode current i s -0.83 a maximum power dissipation p d 0.35 w thermal resistance from junction to ambient (t 5s) r ja 357 /w junction temperature t j 150 storage temperature t stg -50 ~+150 so t -23 1. gate 2. source 3. drain 2012-10 willas electronic corp. SE2303 z
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units static drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -30 gate-source threshold voltage v gs(th) v ds =v gs , i d =-250a -1 -3 v gate-source leakage i gss v ds =0v, v gs =20v 100 na zero gate voltage drain current i dss v ds =-30v, v gs =0v -1 a v gs =-10v, i d =-1.9a 0.158 0.190 drain-source on-state resistance a r ds(on) v gs =-4.5v, i d =-1.4a 0.275 0.330 ? forward transconductance a g fs v ds =-5v, i d =-1.9a 1 s dynamic b input capacitance c iss 155 output capacitance c oss 35 reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 25 pf v ds =-15v,v gs =-10v,i d =-1.9a 4 8 total gate charge q g 2 4 gate-source charge q gs 0.6 gate-drain charge q gd v ds =-15v,v gs =-4.5v,i d =-1.9a 1 nc gate resistance r g f =1mhz 1.7 8.5 17 ? turn-on delay time t d(on) 4 8 rise time t r 11 18 turn-off delay time t d(off) 11 18 fall time t f v dd =-15v, r l =10 ?, i d =-1.5a, v gen =-10v,rg=1 ? 8 16 turn-on delay time t d(on) 36 44 rise time t r 37 45 turn-off delay time t d(off) 12 18 fall time t f v dd =-15v, r l =10 ?, i d =-1.5a, v gen =-4.5v,rg=1 ? 9 14 ns drain-source body diode characteristics continuous source-drain diode current i s t c =25 -1.75 pulse diode forward current a i sm -10 a body diode voltage v sd i s =-1.5a -0.8 -1.2 v notes : a. pulse test : pulse width 300s, duty cycle 2%. b. guaranteed by design, not s ubject to production testing. 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2303
-0 -1 -2 -3 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.1 -1 -10 -0 -1 -2 -3 -4 -5 -0 -4 -8 -12 -16 -20 -0 -4 -8 -12 -16 -20 50 100 150 200 250 300 -0 -4 -8 -12 -16 -20 0 100 200 300 400 500 t a =25 pulsed t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) t a =25 pulsed -3 -0.3 v sd i s source current i s (a) source to drain voltage v sd (v) -10v -8.0v -6.0v -4.5v -4.0v -3.5v v gs =-3.0v output characteristics drain current i d (a) drain to source voltage v ds (v) t a =25 pulsed typical characteristics v gs =-4.5v v gs =-10v on-resistance r ds(on) (m ) drain current i d (a) t a =25 pulsed i d =-1.9a i d r ds(on) v gs r ds(on) on-resistance r ds(on) (m ) gate to source voltage v gs (v) 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2303
outline drawing dimensions in inches and (millimeters) sot-23 rev.d .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2303
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